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warp2 series igbt withultrafast soft recovery diode IRGP50B60PD1-Ep 08/06/08 features ? npt technology, positive temperature coefficient ? lower v ce (sat) ? lower parasitic capacitances ? minimal tail current ? hexfred ultra fast soft-recovery co-pack diode ? tighter distribution of parameters ? higher reliability benefits ? parallel operation for higher current applications ? lower conduction losses and switching losses ? higher switching frequency up to 150khz e g n-channel c v ces = 600v v ce(on) typ. = 2.00v @ v ge = 15v i c = 33a equivalent mosfet parameters r ce(on) typ. = 61m ? i d (fet equivalent) = 50a applications ? telecom and server smps ? pfc and zvs smps circuits ? uninterruptable power supplies ? consumer electronics power supplies smps igbt absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 75 i c @ t c = 100c continuous collector current 45 i cm pulse collector current (ref. fig. c.t.4) 150 i lm clamped inductive load current 150 a i f @ t c = 25c diode continous forward current 40 i f @ t c = 100c diode continous forward current 15 i frm maximum repetitive forward current 60 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 390 w p d @ t c = 100c maximum power dissipation 156 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) CCC CCC 0.32 c/w r jc (diode) thermal resistance junction-to-case-(each diode) CCC CCC 1.7 r cs thermal resistance, case-to-sink (flat, greased surface) CCC 0.24 CCC r ja thermal resistance, junction-to-ambient (typical socket mount) CCC CCC 40 weight CCC 6.0 (0.21) CCC g (oz) ? lead-free to-247ad 1 www.irf.com downloaded from: http:///
IRGP50B60PD1-Ep 2 www.irf.com notes: r ce(on) typ. = equivalent on-resistance = v ce(on) typ./ i c , where v ce(on) typ.= 2.00v and i c =33a. i d (fet equivalent) is the equivalent mosfet i d rating @ 25c for applications up to 150khz. these are provided for comparison purposes (only) with equivalent mosfet sol utions. v cc = 80% (v ces ), v ge = 15v, l = 28 h, r g = 22 ?. pulse width limited by max. junction temperature. energy losses include "tail" and diode reverse recovery, data generated with use of diode 30eth06. c oes eff. is a fixed capacitance that gives the same charging time as c oes while v ce is rising from 0 to 80% v ces . c oes eff.(er) is a fixed capacitance that stores the same energy as c oes while v ce is rising from 0 to 80% v ces . electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 600 v v ge = 0v, i c = 500a ? v (br)ces / ? t j temperature coeff. of breakdown voltage 0 . 3 1v / c v ge = 0v, i c = 1ma (25c-125c) r g internal gate resistance 1.7 ? 1mhz, open collector 2 . 0 02 . 3 5 i c = 33a, v ge = 15v 4, 5,6,8,9 v ce(on) collector-to-emitter saturation voltage 2.45 2.85 v i c = 50a, v ge = 15v 2 . 6 02 . 9 5 i c = 33a, v ge = 15v, t j = 125c 3 . 2 03 . 6 0 i c = 50a, v ge = 15v, t j = 125c v ge(th) gate threshold voltage 3.0 4.0 5.0 v i c = 250a 7,8,9 ? v ge(th) / ? tj threshold voltage temp. coefficient -10 mv/c v ce = v ge , i c = 1.0ma gfe forward transconductance 41 s v ce = 50v, i c = 33a, pw = 80s i ces collector-to-emitter leakage current 5.0 500 a v ge = 0v, v ce = 600v 1 . 0m a v ge = 0v, v ce = 600v, t j = 125c v fm diode forward voltage drop 1.30 1.70 v i f = 15a, v ge = 0v 10 1 . 2 01 . 6 0 i f = 15a, v ge = 0v, t j = 125c i ges gate-to-emitter leakage current 100 na v ge = 20v, v ce = 0v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig qg total gate charge (turn-on) 205 308 i c = 33a 17 q gc gate-to-collector charge (turn-on) 70 105 nc v cc = 400v ct1 q ge gate-to-emitter charge (turn-on) 30 45 v ge = 15v e on turn-on switching loss 255 305 i c = 33a, v cc = 390v ct3 e off turn-off switching loss 375 445 j v ge = +15v, r g = 3.3 ? , l = 200h e total total switching loss 630 750 tj = 25c t d(on) turn-on delay time 30 40 i c = 33a, v cc = 390v ct3 t r rise time 10 15 ns v ge = +15v, r g = 3.3 ? , l = 200h t d(off) turn-off delay time 130 150 t j = 25c t f fall time 11 15 e on turn-on switching loss 580 700 i c = 33a, v cc = 390v ct3 e off turn-off switching loss 480 550 j v ge = +15v, r g = 3.3 ? , l = 200h 11,13 e total total switching loss 1060 1250 t j = 125c wf1,wf2 t d(on) turn-on delay time 26 35 i c = 33a, v cc = 390v ct3 t r rise time 13 20 ns v ge = +15v, r g = 3.3 ? , l = 200h 12,14 t d(off) turn-off delay time 146 165 t j = 125c wf1,wf2 t f fall time 15 20 c ies input capacitance 3648 v ge = 0v 16 c oes output capacitance 322 v cc = 30v c res reverse transfer capacitance 56 pf f = 1mhz c oes eff. effective output capacitance (time related) 2 1 5 v ge = 0v, v ce = 0v to 480v 15 c oes eff. (er) effective output capacitance (ener gy related) 1 6 3 t j = 150c, i c = 150a 3 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct2 rg = 22 ? , v ge = +15v to 0v t rr diode reverse recovery time 42 60 ns t j = 25c i f = 15a, v r = 200v, 19 7 41 2 0 t j = 125c di/dt = 200a/s q rr diode reverse recovery charge 80 180 nc t j = 25c i f = 15a, v r = 200v, 21 220 600 t j = 125c di/dt = 200a/s i rr peak reverse recovery current 4.0 6.0 a t j = 25c i f = 15a, v r = 200v, 19,20,21,22 6 . 51 0 t j = 125c di/dt = 200a/s ct5 conditions downloaded from: http:///
IRGP50B60PD1-Ep www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - reverse bias soa t j = 150c; v ge =15v fig. 4 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 5 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 6 - typ. igbt output characteristics t j = 125c; tp = 80s 0 20 40 60 80 100 120 140 160 t c (c) 0 50 100 150 200 250 300 350 400 450 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 1000 i c a ) 012345678910 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 012345678910 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 012345678910 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 0 20 40 60 80 100 120 140 160 t c (c) 0 10 20 30 40 50 60 70 80 90 i c ( a ) downloaded from: http:///
IRGP50B60PD1-Ep 4 www.irf.com fig. 8 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = 125c fig. 12 - typ. switching time vs. i c t j = 125c; l = 200h; v ce = 390v, r g = 3.3 ? ; v ge = 15v. diode clamp used: 30eth06 (see c.t.3) fig. 11 - typ. energy loss vs. i c t j = 125c; l = 200h; v ce = 390v, r g = 3.3 ? ; v ge = 15v. diode clamp used: 30eth06 (see c.t.3) fig. 10 - typ. diode forward characteristics tp = 80s fig. 7 - typ. transfer characteristics v ce = 50v; tp = 10s 0 5 10 15 20 v ge (v) 1 2 3 4 5 6 7 8 9 10 v c e ( v ) i ce = 15a i ce = 33a i ce = 50a 0 5 10 15 20 v ge (v) 1 2 3 4 5 6 7 8 9 10 v c e ( v ) i ce = 15a i ce = 33a i ce = 50a 0 1 02 03 04 05 06 0 i c (a) 0 200 400 600 800 1000 1200 e n e r g y ( j ) e off e on 0 10 20 30 40 50 60 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 5 10 15 20 v ge (v) 0 100 200 300 400 500 600 700 800 900 i c e ( a ) t j = 25c t j = 125c t j = 125c t j = 25c 1 10 100 0.8 1.2 1.6 2.0 2.4 fm f i nst ant aneous f or w ard c urrent - i (a ) forward voltage drop - v (v) t = 150c t = 125c t = 25c jj j downloaded from: http:///
IRGP50B60PD1-Ep www.irf.com 5 fig. 14 - typ. switching time vs. r g t j = 125c; l = 200h; v ce = 390v, i ce = 33a; v ge = 15v diode clamp used: 30eth06 (see c.t.3) fig. 13 - typ. energy loss vs. r g t j = 125c; l = 200h; v ce = 390v, i ce = 33a; v ge = 15v diode clamp used: 30eth06 (see c.t.3) fig. 16 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 15 - typ. output capacitance stored energy vs. v ce fig. 17 - typical gate charge vs. v ge i ce = 33a 0 5 10 15 20 25 r g ( ? ) 300 400 500 600 700 800 900 1000 e n e r g y ( j ) e on e off 0 5 10 15 20 25 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 50 100 150 200 250 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 400v 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 100 200 300 400 500 600 700 v ce (v) 0 10 20 30 40 e o e s ( j ) fig. 18 - normalized typ. v ce(on) vs. junction temperature i c = 33a, v ge = 15v -50 0 50 100 150 200 t j (c) 0.8 1.0 1.2 1.4 n o r m a l i z e d v c e ( o n ) ( v ) downloaded from: http:///
IRGP50B60PD1-Ep 6 www.irf.com

20 40 60 80 100 100 1000 f di /dt - (a/s) t - (ns) rr i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c rj j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c rj j 0 200 400 600 800 100 1000 f di /dt - (a/s) rr q - (nc) i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c rj j 100 1000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c rj j downloaded from: http:///
IRGP50B60PD1-Ep www.irf.com 7 fig. 24. maximum transient thermal impedance, junction-to-case (diode) fig 23. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.363 0.0001120.864 0.001184 0.473 0.032264 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.157 0.0003460.163 4.28 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri downloaded from: http:///
IRGP50B60PD1-Ep 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit l rg 80 v dut 480v 1k vcc du t 0 l fig.c.t.4 - resistive load circuit rg vcc dut r = v cc i cm fig.c.t.3 - switching loss circuit fig. c.t.5 - reverse recovery parameter test circuit reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust pfc diode l rg vcc dut / driver downloaded from: http:///
IRGP50B60PD1-Ep www.irf.com 9 fig. wf1 - typ. turn-off loss waveform @ t j = 25c using fig. ct.3 fig. wf2 - typ. turn-on loss waveform @ t j = 25c using fig. ct.3 fig. wf3 - reverse recovery waveform and definitions -100 -50 0 50 100 150 200 250 300 350 400 450 500 550 600 -0.20 0.00 0.20 0.40 time (s) v ce (v) -10 0 10 20 30 40 50 60 i ce (a) 90% i ce 5% i ce 5% v ce eof f tf -50 0 50 100 150 200 250 300 350 400 450 -0.10 0.00 0.10 0.20 time(s) v ce (v) -10 0 10 20 30 40 50 60 70 80 90 i ce (a) 90% i ce 5% v ce 10% i ce eon loss tr test current

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IRGP50B60PD1-Ep 10 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2008 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on irs web site.

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